Interpixel Charge Dynamics in Trench-Isolated Si-Based Sensors

High spatial resolution of Si-based pixels requires dense pixel packing, leading to a significant reduction in inter-pixel distance. This reduction causes undesirable signals, such as ghosts (self-induced signals) in the interpixel region. Particularly, the interpixel layout with double SiO2 trenches seems sensitive to the enhanced accumulation of thermally induced charge between trenches, followed by charge avalanches due to the presence of a strong electric field that is confined by trenches in an extremely narrow region of 2 μm. In this paper, we provide a brief overview of the most recent results on the study of ghosts in the inter-pixel (inter-trench) region from the campaign at the ELI ERIC, ELI Beamlines laser facility. To study the dynamics of space charge, we used an fs-laser and the transient current technique (TCT).