Orbital Current Driven Magnetic Memory

Orbitronics is a newly developed field in spintronics with academic and industrial interests. Here, we for the first time demonstrate three-terminal magnetic tunnel junctions utilizing orbital Hall effect (OHE) as their main writing methods. The MTJ s were fabricated by a 200 mm spin-orbit torque magnetic random-access memory (SOT-MRAM) standard line. A critical switching current density of 0.61
$(10^{12} \mathrm{A}/\mathrm{m}^{2})$
, or critical switching voltage of 0.37 V is realized. The effective charge-to-spin conversion efficiency of our Ru(12)/Pt(2) bottom electrode is determined to be 0.10 while its resistivity is as low as 32
$\mu\Omega$
·cm, which is promising for integrating multiple MTJs on a same bottom electrode to optimize the footprint of SOT-MRAM. Our results pave the way for practical applications of orbitronics on magnetic memory.