Efficient Spin-Orbit Torque Magnetization Switching with Low Current Density in Crystalline Ferromagnetic Semiconductor

This study explores spin-orbit torque (SOT)-induced magnetization switching in a ferromagnetic film of crystalline (Ga,Mn)(As,P) characterized by perpendicular anisotropy. The magnetization switching in the film is discerned through the hysteresis of Hall resistance (HR) during current scan measurements. The observed chirality in HR hysteresis aligns with the SOT generated by current-induced Rashba- and Dresselhaus-type spin orbit fields (SOFs) within the tensile strained (Ga,Mn)(As,P) film. As temperature increases, the critical current systematically diminishes, reaching a minimum of
$\mathbf{J}\sim \mathbf{4}\times \mathbf{10}^{\mathbf{3}}\ \mathbf{A}/\mathbf{cm}^{\mathbf{2}}$
at 65 K. This investigation reveals the feasibility of SOT-induced magnetization switching at remarkably low current densities in a single layer of ferromagnetic film, offering a novel avenue for the development of uncomplicated and energy-efficient spintronic devices.