Anisotropy dependent spin orbit torque switching in crystalline ferromagnetic semiconductor

We investigated spin-orbit-torque (SOT) magnetization switching phenomena in a single layer of crystalline dilute ferromagnetic semiconductor (DFMS) system by performing the micromagnetic simulation using MuMax
³
. The investigation was aimed to elucidate the influence of magnetic anisotropy on the SOT switching mechanism of the DFMS film. We discovered that the field-like torque (FLT) component of SOT dominates the field-free deterministic magnetization switching in an in-plane magnetized DFMS sample with biaxial anisotropy. Conversely, the damping-like torque (DLT) component plays a crucial role in the field-free deterministic magnetization switching in the DFMS film with uniaxial anisotropy. These findings deepen our understanding of the SOT switching mechanism for diverse anisotropic systems, paving the way for the development of SOT-based spintronics devices.