Impact of Various Buffer Layers on CdTe Solar Cells Performance Using SCAPS-1D Simulator

This paper presents the optimization of CdTe solar cell performances through a comparative study involving four buffer layer materials: CdS, CdxZn1-xS, ZnTe and ZnS. Zinc Oxide (ZnO) layer was incorporated as the transparent conductive oxide (TCO) top-layer. The investigation focused on varying buffer layer thickness from 10 nm to 100 nm to assess its impact on cell performance, with a focus on evaluating photovoltaic parameters using the SCAPS-1D simulator. Our results indicate that CdS exhibited superior performance at 100 nm thickness. As a result, the enhanced CdTe solar cell using substrate configuration Mo/p-CdTe/n-CdS/ZnO achieved a maximum power conversion efficiency (PCE) of 21.44%, an open-circuit voltage (VOC) of 0.89 V, a short-circuit current density (JSC) of 27.70 mA/cm2, and a fill factor (FF) of 86.12%.