Electrical and Spectrum Study of the InGaAs/AlGaAs Multiple Quantum Well Photodetectors

This paper presents the light intensity and responsivity characteristics of InGaAs/AlGaAs multiple-quantum-well (MQW) photodetectors integrated on Si(001) and GaAs substrates. This charcateristics has been investigated by mean of numerical simulations in the 300-500K temperature range. Using Atlas of Silvaco, our isothermal simulation results reveal that the proposed structure of multiple quantum well (MQW) photodetectors increases the photocurrent density in comparison to the conventional photodectors. The photocurrent density rises to
$5.33.10^{-7}$
A at the bias under
$\lambda=800\ \text{nm}$
with an incident optical power density of 0.1 W/cm
²
. This work illustrates the potential for using to extend the utility of InGaAs/AlGaAs multiple-quantum-well photonics in 800 nm band integrated optical transceivers for communication applications.