Effect of Ti/TiN Thin Film Geometircal Desing on the Response of RTDs

In this study, a micropatterned thin film resistors were used as a temperature sensors. The resistance temperature detectors (RTD) are fabricated using the CMOS technology flow process with different geometrical designs. The used material was a stack of titanium/titanium-nitride (Ti/TiN) as a resistor; this metal was chosen since it is widely used in microelectronic technology, as well as its properties such as specific resistivity, thermal stability, and temperature coefficient of resistance (TCR). The elaborated devices was tested, and the outcomes were investigated. The Ti/TiN exhibits a significant temperature dependency as well as an increase of the TCR with the length of the device.