Impact of Gate Dielectrics on Electrical Characteristics of p-GaN Gate Enhancement Mode MISHEMT

This work reports the impact of gate dielectrics on the performance of a p-GaN gate metal insulator semi-conductor high electron mobility transistor (MISHEMT). An investigation on the effect of different dielectric materials such as Si
3
N
4
, Al
2
O
3
and
$H$
fO2 on the threshold voltage and current output of the device is presented. The effect of the thickness of gate dielectric layers on the device characteristics is also analysed. A novel stacked gate dielectric configuration is proposed for engineering the threshold voltage of p-GaN gate MISHEMTs.