New insights affect power MOSFET ruggedness

Issues affecting unclamped inductive switching (UIS) and diode recovery stress (DRS) failure modes of power MOSFET devices are discussed in terms of a modified device equivalent circuit. Test methods for both UIS and DRS are described; a useful format for device DRS capability is also described. The effect on switching efficiency of stored minority carrier charge in the MOSFET source-drain diode is highlighted.<
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