Design Methodology for Wideband Low Noise Amplifier for RF-front end

The design of a shunt feedback wideband low noise amplifier (LNA) is presented in this study with an emphasis on employing an accurate design process to achieve a low noise figure. The methodology integrates scattering parameters and gm/Id design, tailored for implementation in a 65 nm technology. The final LNA has an impressively low noise figure of 1.2 dB and a gain of 12 dB. Additionally, it exhibits a 5 dBm input-referred third-order intercept point, indicating robust linearity. Importantly, the designed LNA is optimized for operation within the sub-6 GHz 5G frequency band, promising efficient performance within this crucial spectrum. This work underscores the significance of meticulous design techniques in realizing high-performance LNAs for next-generation communication systems, particularly in the context of emerging 5G networks.