Efficient, High Power, Wide-Aperture Single Emitter Diode Lasers Emitting at 915 nm

We present single emitter laser diodes with high optical output power (
$\boldsymbol {P} {_{\text {out}}}$
), conversion efficiency (
$\boldsymbol {\eta } {_{\text {E}}}$
), and lateral beam quality in quasi-continuous-wave (QCW) and continuous-wave (CW) operations enabled by using very wide stripe width (ranging from 400 to 1500
$\mu $
m) and laterally structured p-side contact to prevent higher order and unwanted ring modes. We show that the maximum QCW
$\boldsymbol {P} {_{\text {out}}}$
increases for wider stripe and
$\boldsymbol {P} {_{\text {out}}}$
of
$\boldsymbol {\sim }~290$
W (limited by facet failure) is obtained at
$\boldsymbol {\eta } {_{\text {E}}} =60$
% for 1500
$\mu $
m stripes using 500
$\mu $
s pulse width and 10Hz repetition-rate at a heatsink temperature of
$\boldsymbol {T} {_{\text {HS}}} =25$
°C. In contrast, the maximum CW
$\boldsymbol {P} {_{\text {out}}}$
of 71W (limited by the available cooling of the test set-up) at
$\boldsymbol {\eta } {_{\text {E}}} =59$
% is obtained for 1000
$\mu $
m stripes, with lateral-beam-parameter-product (BPPLat.) < 75mm
$\boldsymbol {\cdot }$
mrad, which is suitable for coupling into 1mm core 0.15NA fiber.