Dynamic response to electro-optical control of diamond based non-volatile photo-switch

Diamond-based junction field effect transistor can be used as non-volatile photo-switches. The photo-controlled memory effect in these transistors arises from the absence of ionized nitrogen donors in the neutral region of the Ib diamond substrate gate, forming a pn junction with the p-type diamond conduction channel. In this work, we study the impact of illumination and gate designs on transistor dynamics. Electro-optical characterization, including current transients under different illumination conditions, reveal dependencies on wavelength and light power density. This study shows that optimized geometries of this device pave the way for fast switching and high-voltage applications.