Within-Chip Bridged-Pattern Short Detection Using Spatially Distributed Kerf Test Structures in 7nm FinFET Technology

This paper presents a bridged-pattern short detection method using the composite yield of spatially distributed minimum pitch metal kerf test structures to capture within-chip non-uniform yield variation. Location and layout analyses reveal a top-to-bottom yield delta within the product chip and a correlation to the metal tip-to-side shorting monitors, suggesting a bridged-pattern short. An inline scan chain latch macro also detects this signature with better signal strength. These inline monitors can unveil a within-chip bridged-pattern short defect when spatially distributed. They provide area-efficient early detection of this defect mode.