Impact of Vacancies on the Transport Properties of Monolayer Germanium-Sulfide Nanoribbons

Quantum transport simulations are employed to investigate the impact of vacancies on the transport properties of monolayer germanium-sulfide (GeS) nanoribbons (GeSNRs). We statistically investigate the impact of vacancy percentage ($P_{v}$) on the transmission, transport gap, and electron and hole conductance of GeSNRs. We show that the increase of $P_{V}$ significantly degrades the transmission, especially near the conduction band minimum and valence band maximum that are the most important for transport in electron devices. Furthermore, a linear increase of the transport gap with $P_{V}$ is reported, with 0.02eV increase of the gap per $1 \%$ of $P_{v}$. Finally, carrier conduction shows a hyperbolic decreasing dependence on $P_{V}$ with conductance lowered by as much as $\sim 5 \times$ in GeSNRs with only $1 \%$ of vacancies.