Investigation of the One-Dimensional Semiconductor I4Si2 as a FET Channel Material

One-dimensional (1D) semiconductor I
4
Si
2
is analyzed in terms of its appropriateness as a channel material for gate-all-around field-effect transistor (GAA FETs). We combine wannierized Hamiltonians obtained from density-functional theory (DFT) calculations with Green’s function formalism to explore the electronic and transport properties of I
4
Si
2
, and ballistic performance of I
4
Si
2
GAA FETs. We find that I
4
Si
2
GAA FET exhibits a high ballistic ON-state current of $3.13 \mathrm{mA} / \mu \mathrm{m}$ with an ON-OFF switching ratio of $\sim 3 \times 10^{5}$, which fulfils the requirements of IEEE International Roadmap for Devices and Systems (IRDS). These findings are supported and explained by examining the band structure, transmission, density of states, channel charge density, total and quantum capacitance, and electron injection velocity in the 1D semiconductor I
4
Si
2
.