Memories

Summary

The first transistorized memories were “bistable flip‐flops”. For storage memories, the design and manufacture of the floating‐gate MOSFET transistor in 1967, by Kahng and Sze of Bell Labs, led to the replacement of (magnetic) hard disks in the mid‐1970s and the development of flash memories. SRAM memories are volatile, they do not retain information when the power is cut, but they do not need to be refreshed as long as no action is taken. Central memories developed using MOSFET technology are volatile memories, as they do not retain information when the power is cut. The first DRAM cell, AMS 6001, was developed and marketed by Advanced Memory Systems, a company founded in 1968 by defectors from IBM and Fairchild. In 1963, IBM decided to develop and manufacture the NMOSFET transistor, which was to be one of the components of a DRAM memory cell designed by Robert Dennard in 1968.