A Comprehensive Review and Comparative Analysis the TFET and DG-JL-TFET

Tunnel Field-Effect Transistors (TFETs) have gained significant attention in recent years due to their potential for low power consumption and high switching speed. However, their performance is limited by the low on-current caused by the low tunnelling probability of carriers. Double Gate Junctionless TFETs (DG-JLTFETs) have been proposed as an alternative, offering better performance than conventional TFETs. This comparative review evaluates and compares the performance of TFETs and DG-JL TFETs in terms of on-current, subthreshold slope, and transconductance. The review finds that DG-JL TFETs have a higher on-current, smaller subthreshold slope, and better transconductance compared to conventional TFETs. However, the fabrication process of DG-JLTFETs is more complex than that of conventional TFETs, which may limit their practical implementation. Overall, while both TFETs and DG- JLTFETs have their advantages and disadvantages, DG-JLTFETs show promises a potential alternative to conventional TFETs for future low-power electronic devices.