A 382nVrms 100GΩ@50Hz Active Electrode for Dry-Electrode EEG Recording

This article describes a low noise and ultra-high input impedance active electrode (AE) interface chip for dry-electrode EEG recording. To compensate the input parasitic capacitance and the ESD leakage, power/ground/ESD bootstrapping is proposed. This design integrates chopping stabilization technique to suppress flicker noise of the amplifier which has never been tackled in previous bootstrapped AE design. Both on-chip and off-chip input routing is active shielded to minimize wire parasitic. Fabricated in a 0.18
μ
m CMOS process, the AE core occupies about 0.056mm2 and draws 17.95
μ
A from a 1.8V supply. The proposed AE achieves 100GΩ input impedance at 50Hz and over 1GΩ at 1kHz with a low input-referred noise of 382nVrms integrated from 0.5Hz to 70Hz. This design is the first 100GΩ@50Hz input impedance chopper stabilized AE compared to the state-of-the-art. Dry-electrode EEG recording capability of the proposed AE are verified on three types of experiments including spontaneous α-wave, event related potential and steady-state visual evoked potential.