Dark Current Random Telegraph Signal in Proton-Irradiated Single InGaAs Photodiodes

In this work, we study the dark current random telegraph signal (DC-RTS) on 14.4-MeV proton-irradiated InGaAs single photodiodes. The analyzed diodes showed a two-level DC-RTS. DC-RTS amplitudes and lifetimes of the level “high” and level “low” are thermally activated. Moreover, a reverse bias dependence of the lifetimes of the levels has been observed.