Lifetime Estimation of HD-GITs based on Drain Leakage Current

The GaN device is a high-performance alternative to Si devices in the market. However, concerns have been raised regarding their reliability. This paper characterized their reliability by conducting power cycling test (PCT). The test results reveal that the drain leakage current increases as the device degrades. This observation suggests that the drain leakage current could serve as a potential precursor for estimating the device’s lifetime. To verify this, device failure is defined as the leakage current exceeding 5 times the initial. Subsequently, the experimental data were analyzed, revealing that the lifetime distribution follows a Weibull distribution. This indicates that the drain leakage current could serve as a precursor for evaluating the lifetime of GaN devices. Furthermore, by utilizing the Arrhenius relationship, the lifetime of GaN devices under various conditions can be estimated. This discovery presents a novel approach for predicting failure and modeling the lifetime of GaN devices.