Design, Packaging and Evaluation of an All-SiC-Based Four-Level ANPC Power Module

This paper presents a novel all-SiC-based four-level active neutral-point-clamped (ANPC) power module utilizing high-performance 1700V/45mΩ and 900V/30mΩ SiC MOSFETs. The module exhibits exceptional characteristics such as high power density, superior thermal performance, and low parasitic inductance, making it suitable for applications requiring high voltage, power, and switching frequency. Additionally, to suppress the voltage overshoot and improve the operating voltage of power module further, the parasitic inductance is reduced by optimizing the commutation loop of four-level ANPC topology and modifying the wire-bonding between devices with common source node. Furthermore, the paper provides detailed insight into the packaging procedure to enable reproducibility and potential migration to other topologies. The use of Q3D and COMSOL simulations validates the low parasitic inductance and high thermal performance achieved in the design of the power module. Experimental validation through a double pulse test (DPT) further confirms the excellent performance of the proposed power module.