A comprehensive evaluation of 650V SiC JFET and Cascode JFET

This article present a comprehensive evaluation of 650V rated power devices including SiC JFET, Si/SiC Cascode and GaN/SiC Cascode. The purpose of conducting measurement on multiple devices under the identical circuit conditions is to facilitate a comparative analysis of their respective advantages and disadvantages. Firstly, the switching performance of the devices have been tested using a standard double pulse switching circuit. Then used the unclamped inductive switching (UIS) and short-circuit (SC) platform are used to discusses the device avalanche ruggedness and SC reliability respectively.The results indicate that GaN/SiC Cascode exhibits superior switching characteristics and short-circuit endurance, while Si/SiC Cascode demonstrates high avalanche ruggedness.