Observations on Short-Circuit and Avalanche Robustness of Asymmetric trench-gate SiC MOSFETs after γ-ray Radiation

The excellent performances of SiC power MOSFETs have extensively attracted attention from aerospace industries, but radiation-induced reliability issues are still a major concern for their use in space environments. In this paper, the short-circuit robustness and avalanche robustness of commercial asymmetric trench-gate SiC MOSFETs are comparatively evaluated before and after different doses of γ-ray radiation. It is found that the short-circuit energy of the DUT is reduced by 2% after 100krad radiation, which indicates that the short-circuit robustness of the asymmetric trench-gate SiC MOSFETs has less performance degradation after radiation. However, the situation is totally different for avalanche robustness as their avalanche energy decreased by 22.5% after 100krad radiation.