Gate Driver Layout Design for DAB Converter with Two Parallel SiC MOSFETs

This article provides a guide for optimization design of gate driver layout for a dual-active-bridge (DAB) converter which is implemented based on two parallel SiC MOSFETs. To achieve the same loop inductance of the turn-on or turn-off gate loop of the common gate driver for the two parallel SiC MOSFETs, symmetric printed-circuit-board (PCB) layout must be guaranteed. Besides, small loop inductance is helpful to depress voltage oscillation issue at the gate driver loop, and small loop capacitance helps suppress false trigger issue. To achieve these goals, an optimized gate driver layout is introduced in this article based on magnetic flux cancelling technique. Finally, a 11kW DAB power converter prototype is built to verify the optimized gate driver layout.