An Accurate and Effective Spice Model of 6.5kV SiC MOSFET with Parasitic Parameters Analysis in Medium-Voltage Power Module

In recent years, SiC MOSFET has an extremely high development speed and wide application range for its advantages of high operation frequency and low on-resistance. For practical use, it is crucial to achieve an accurate and effective model for SiC MOSFET in evaluating device performance more effectively. In this paper, an accurate spice model for 6.5kV SiC MOSFET is built to closely match the measured static characteristics of the chip initially. Besides, parameters of the spice model are further calibrated by DPT simulation results of the TCAD model for more accurate dynamic characteristics reflection of the chip. DPT results from both simulation and experiment are compared to validate the accuracy of the developed spice model. Finally, the influence of parasitic parameters especially parasitic capacitance on the switching performances of the medium-voltage SiC module is discussed.