A semi-circular T-shaped anode AlGaN/GaN Schottky barrier diode temperature sensor

This paper introduces a temperature sensor with a semi-circular T-anode and a partially p-GaN cap AlGaN/GaN Schottky barrier diode (PCT-SBD). The device adjusts the current distribution of the diode through the p-GaN layer and the semi-circular T-anode, demonstrating excellent temperature sensitivity and linearity in the range of 298 K to 473 K. The analysis further explores the temperature sensor’s structure, specifically the two parallel branches, to discuss the underlying mechanisms enhancing temperature sensitivity. This temperature sensor can be integrated with AlGaN/GaN high electron mobility transistors (HEMTs) to enhance the accuracy of temperature measurements in heterojunctions.