Loss Modeling of the Si/SiC Hybrid Switch Considering Multiple Driving Parameters

The Si/SiC hybrid switch is composed of two separated devices including Si IGBT and SiC MOSFET, which has attracted much attention due the performance advantages. However, the existing research on the loss characteristics of Si/SiC hybrid switches mainly focuses on the switching sequence, while the influence of driving parameters (driving voltage, driving resistance, etc.) on loss characteristics is normally ignored. In fact, the driving parameters of the two separation devices are closely related to the conduction loss and switching loss of the Si/SiC hybrid switch. Thus, the influence of multiple driving parameters on the loss of the Si/SiC hybrid switch is analyzed, and the loss model considering multiple driving parameters is established in this paper. Finally, the accuracy of the proposed loss model is verified by the experiments. The results show that the maximum percentage error of the proposed loss model on conduction loss is only 4.64%, and the maximum percentage error on switching loss is only 7.13 %, both of which are lower than the percentage error of the existing loss model (17.9%).