Dynamic Reverse Bias Test Circuit for SiC MOSFET with Adjustable dV ds/dt

Traditional reliability tests, such as High- Temperature Gate Bias (HTGB) and High-Temperature Reverse Bias (HTRB), are primarily designed for Si-based devices. However, these tests fail to emulate the novel operational mode characterized by high voltage operation (V
ds
> 1,000 V) combined with rapid switching (dV
ds
/dt > 50 V/ns), rendering users unable to accurately assess the reliability of commercial devices under the new condition. A dynamic reverse bias (DRB) testing platform with adjustable dV
ds
/dt functionality has been introduced, which up to 80 V/ns, achieved by adjusting gate voltage. The functionality of the platform was experimentally validated in this study, followed by DRB testing. After approximately one thousand hours of testing, noticeable degradation of the test device was observed. Simultaneously, HTRB testing was conducted under identical voltage conditions for comparison purposes. It was discovered that the degradation mechanisms differed between the two testing conditions.