The Packaging Design of the 3.6kV Integrated SiC MOSFET Power Module

SiC MOSFETs are gradually replacing Si-based devices due to their advantages in high temperature, high frequency, and high voltage applications. Applying SiC MOSFETs in medium to high-power scenarios, such as high-voltage inverters and solid-state transformers with around 10kV, can help reduce losses and decrease device volume, thereby increasing power density to a certain extent. However, the rated voltage and current of commercially available SiC MOSFETs are limited. To meet the demands of high-voltage, high-power applications, it is necessary to connect SiC MOSFETs in series and parallel. In this paper, a 3.6KV/600A integrated power module was developed using 1200V/100A SiC MOSFET chips. The module consists of thirty-six SiC MOSFET chips connected in series and parallel. Through optimized packaging design and the integration of dynamic and static equalizer devices and drive circuits within the module, voltage and current balance effects are achieved. The IPM module was assembled using a self-developed packaging platform. The results of the tests indicate that the module exhibits good voltage and current balancing effects.