SiC MOSFET Full Junction Temperature Estimation Modeling Method Based on Data Driving

Firstly, based on SiC MOSFET physical characteristic, its input-output macro model was constructed in this paper. The coefficients related to temperature in this physical model were integrated and simplified, which makes the model come easier and more intuitive. Secondly, the parameters determined method was proposed PSpice simulating data driving. The related coefficients were fixed by the Levenberg-Marquardt algorithm. The full-temperature input-output macro model of SiC MOSFET was completed. Thirdly, based on temperature-sensitive parameter V
dson
, SiC MOSFET junction temperature estimation model was deduced by the polynomial fitting method. Finally, simulating and experiment show that the proposed modeling method and full-temperature input-output macro model of SiC MOSFET were feasible and correct. This makes the estimation and monitoring of junction temperature come easier.