1 kV Vertical P-i-N Diodes Based on Ultra-wide Bandgap Al0.47Ga0.53N Grown by MOCVD

We report 1 kV vertical P-i-N power diodes (PNDs) based on ultra-wide bandgap high-Al-composition (HAC) Al
_0.47
Ga
_0.53
N heterostructures grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD). A p-type AlGaN layer with linearly graded Al composition is inserted between the p-type Al
_0.47
Ga
_0.53
N and p-GaN layer to leverage the polarization-enhanced p-doping effect and alleviate the fast strain relaxation during the growth of p-GaN on lattice mismatched HAC p-AlGaN layer. The vertical HAC AlGaN PNDs exhibit a low ideality factor of 2.3, a high on/off ratio (I
_ON
/I
_OFF
) of ~10
⁹
and a remarkable reverse breakdown voltage of 1032 V, which is significantly enhanced compared to the reported AlGaN-based vertical PNDs. These results provide compelling evidence and significant potential of utilizing ultra-wide bandgap AlGaN material in the fabrication of high-voltage and high-power vertical devices.