Novel Inorganic IR Release Process for High Temperature W2W and D2W Integration

Novel laser lift-off technology has been developed to enable temporary bonding and release through Si carrier wafers. In contrast to well established UV laser de-bonding, high-temperature-stable and ultrathin inorganic materials took over the function of the laser release layer. These LayerRelease™ layers feature highly selective and sensitive laser-matter interaction for minimal mechanical, radiative and thermal stress lift-off of the product, can be deposited using standard fab deposition tools and their residues are removable with common wafer cleaning agents.