Hybrid Bonding Technology: Chemical Mechanical Planarization Process Optimization Using Comprehensive 3D Modeling

In this paper, a methodology for optimization of the Copper-Oxide hybrid bonding (HB) process is presented. The approach employs a 3D model of the chemical-mechanical polishing (CMP) process used in Copper-Oxide hybrid bonding (HB). The CMP model was calibrated to experimental data and subsequently used to optimize pad, slurry, process conditions and pattern density to achieve the planarization targets for good hybrid-bonded wafer yield.