Building a Library of Components for the Development of Microwave Integrated Circuit Systems Based on 0.5 Micrometer Gallium Arsenide Technology

The work is dedicated to the methodology of implementing the adjustment of the substrate structure in CAD for a library of components based on the gallium arsenide (GaAs) technology process with a gate length of 0.5 micrometers. When designing microwave monolithic integrated circuits, the most significant step is conducting electromagnetic analysis, since this process is quite laborious and takes a significant amount of time, particularly for chips with larger dimensions. A properly configured substrate allows for electromagnetic topology analysis to be conducted with precision as close to the actual device produced as possible, which assists in obtaining the simulated characteristics with great accuracy. To reduce design time and associated labor costs for the monolithic IC developer, a properly configured substrate structure within the CAD component libraries is necessary.