Epitaxial-Material Characterization Data for InP-Based Quantum Cascade Lasers Grown on Silicon Substrate

Recent advancements in quantum cascade lasers (QCLs) grown on silicon substrates have showcased the potential of this technology in realizing cost-effective integrated infrared photonics platforms. Epitaxial-material characterization data from the demonstrated lasers operating in the mid-wave and long-wave infrared spectral regions and its analysis are presented in this work. The analysis indicates that reducing defect density in the active region to below 2 × 10
⁷
/cm
⁻²
is essential for achieving performance comparable to high-performance QCLs grown on native InP substrates. The data also suggest that defect density can be reduced by employing either lattice-matched designs or strain-balanced designs with a low-strain both in quantum wells and barriers and by reducing number of active region stages in the laser core.