Theoretical Performance Analysis of High-Efficiency Inx Ga1-xN/Si Tandem Solar Cells

Owing to its intriguing optical and electrical characteristics, the $\mathrm{I}\mathrm{n}_{\mathrm{x}}\mathrm{G}\mathrm{a}1-\mathrm{x}\mathrm{N}$ alloy is being widely considered as a possible silicon (Si) combo for developing low-cost, high-efficiency multi-junction solar cells. This work reports the theoretical design and performance analysis of $\mathrm{I}\mathrm{n}_{\mathrm{x}}\mathrm{G}\mathrm{a}1-\mathrm{x}\mathrm{N}/\mathrm{S}\mathrm{i}$ double junction tandem solar cells utilizing the wxAMPS simulator. The variation of In concentration, active layer thicknesses, and doping levels are considered to achieve optimized $\mathrm{I}\mathrm{n}_{\mathrm{x}}\mathrm{G}\mathrm{a}1-\mathrm{x}\mathrm{N}/\mathrm{S}\mathrm{i}$ tandem solar cells that produce superior efficiency. Our proposed solar cells have an impressive efficiency ($\eta$) of 32.92%, a fill factor (FF) of 89.49%, a short-circuit current $(\mathrm{J}_{\mathrm{s}\mathrm{c}})$ of 12.32 $\mathrm{m}\mathrm{A}/\mathrm{c}\mathrm{m}^{2}$, and an excellent open-circuit voltage $(\mathrm{V}_{\mathrm{o}\mathrm{c}})$ of 2.99 V. These findings of the $\mathrm{I}\mathrm{n}_{\mathrm{x}}\mathrm{G}\mathrm{a}1-\mathrm{x}\mathrm{N}/\mathrm{S}\mathrm{i}$ tandem solar cells would be helpful for rethinking the design paradigm of present multi-junction solar cells and provide a path to achieving superior efficiency with a low-cost $\mathrm{I}\mathrm{n}_{\mathrm{x}}\mathrm{G}\mathrm{a}1-\mathrm{x}\mathrm{N}/$Si tandem structure.