Performance analysis of cerium oxide (CeO2) doped vanadium oxide (V2O5) thin film pressure sensor

The cerium oxide was used as a dopant in the synthesis of vanadium oxide (V
2
O
5
) nano-particles at the concentrations of 5, 10, and 15% weight percent. The dielectric results of these synthesized materials showed that the samples with 10 weight percent $\mathrm{C}\mathrm{e}\mathrm{O}_{2}:\mathrm{V}_{2}\mathrm{O}_{5}$ had lower impedance of 479 $\Omega$, and greater conductivity of 4.31 S/m. As a result, these synthesized samples of nanomaterials were utilized in the work to construct a thin film strain gauge (TFSG) based pressure sensor. Prior to analyzing its performance, the developed sensor on a stainless steel diaphragm was calibrated using pressure calibrator. Considering the relative change in resistance under both compressive and the tensile strain situations, the performance findings showed an impressive linear profile. At 10V excitation, a comparatively linear variation in bridge output is observed in the developed pressure sensor. The sensor developed by incorporating 10 weight percent $\mathrm{C}\mathrm{e}\mathrm{O}_{2}:\mathrm{V}_{2}\mathrm{O}_{5}$ samples showed an optimal sensitivity of 0.4739 mV/V/bar. However, the sensor exhibited a lower hysteresis and nonlinearity (0.047% FSO), resulting in its most stable performance.