A design-oriented single-piece short-channel MOSFET model

In this article we focus on the understanding of the MOSFET behavior allowed by the ACM2.0 model proposed last year. We discuss the concept of inversion level and its relationship with the carrier density taking velocity saturation into account. The extraction of the five DC parameters of the model based on circuit simulations is briefly developed, accounting for second-order effects. Finally, simple expressions for the drain current, the gate transconductance as well as the third-order derivative of the current with respect to the gate voltage, including the velocity saturation phenomenon, are provided.