Single-Event Effect Responses of CMOS Integrated Planar Multiturn Inductors in LC-Tank Oscillators Under Heavy-Ion Microbeam Irradiation

This article presents detailed measurements of a novel radiation effect caused by the sensitivity of on-chip spiral inductors to ionizing particles, leading to single-event frequency transients (SEFTs) in
LC
-tank oscillators. Quantitative experimental results from heavy-ion microbeam irradiation of two-turn and four-turn inductor samples are presented. The findings reveal a homogeneous sensitivity pattern within the perimeter of the inductor coil, with sensitivity decreasing further away from the coil. Moreover, the results demonstrate an increase in sensitivity with frequency. The circuits were fabricated using a 65-nm complementary metal—oxide semiconductor (CMOS) technology.