High Dynamic Range 920 MHz Band Low Power Rectenna With Low Threshold Voltage GaAs GADs

In this paper, the 920 MHz band low power rectifiers with low threshold voltage GaAs gated anode diodes (GADs) are demonstrated for high dynamic range operation. The GaAs GAD has an advantage of controllability on threshold voltage. This enables low threshold voltage of GaAs GAD that is similar value as a Si SBD. In the developed 920 MHz band rectifiers that are the bridge type and the double voltage type, measured rectification efficiencies are higher than that with commercial based Si SBD. Measured sensitivities at output voltage of 0.3 V with open load are -26 dBm and -30 dBm, respectively. Furthermore, estimated maximum input powers are 11 dBm and 12 dBm, respectively. This indicates operation availability at near-field region to the transmitter. This clarifies extreme higher dynamic range of the developed GaAs rectifiers, compared with Si SBD or CMOS rectifiers in past works.