Research on High Efficiency Ge-Based Schottky Diode for Low-Power Microwave Power Transmission

Based on the low turn-on voltage of GePb-based semiconductor materials, a Schottky diode for low-power microwave power transmission and energy harvesting is present in this paper, and the conversion efficiency of the rectifying circuit based on the SPICE model of this device is significantly improved under low input power, which will provide technological support for the development of the space solar power station, wireless sensor network and other technologies.