Polar Code Construction for Resistive Memories With Sneak-Path Interference

Resistive random-access memory (ReRAM) stands out as a promising candidate for the next generation non-volatile memory technology. However, the reliability of ReRAM is susceptible to sneak-path interference within the crossbar array structure. To mitigate the combined effects of the sneak-path interference and channel noise, the advanced channel coding technology, the polar coding scheme, is implemented in the ReRAM channel. Given the asymmetric and signal dependent nature of the states of memory cells in the ReRAM channel, two channel symmetrize schemes based on density evolution (DE) construction are proposed. The first scheme proceeds with DE separately for ReRAM channels with no sneak path and full sneak path. It then combines these two cases using a weighted approach. The second scheme involves symmetrizing the ReRAM channel based on adding the ternary output, followed by DE to construct polar codes for ReRAM channels. The simulation results demonstrate that the two proposed DE construction methods outperform the polarized weight construction and the 5G construction, approaching the performance of the MC construction.