Physical And Electrical Characterization of MoS2 Layers Deposited by RF Magnetron Sputtering for 2D FETs

The electrical characterization by capacitance-voltage (CV) and by current-voltage (IV) measurements of Metal-Insulator-Semiconductor structures (MIS) using HfO
2
as dielectric and MoS
2
as semiconductor layer, respectively, is presented, where both layers are deposited at room temperature by RF magnetron sputtering, from HfO
2
and MoS
2
targets, respectively. Samples with and without temperature annealing are analyzed. The resistivity of the deposited layers as function of annealing temperature decreased in more than two orders after the annealing at 300 °C. The deposited MoS
2
layer presented P-type conductivity as revealed by CV measurements in MIS capacitors (Mo/HfO
2
/MoS
2
/Mo), which seems to be related to plasma processes used during the fabrication of the devices. The calculated charge concentration of the MoS
2
layer was in the order of 3.9x10
¹⁶
cm
^-3
. The CV characteristics revealed bias stability, as well as repeatability of the fabrication processes. The presence and thickness of the MoS
2
layer was confirmed by Secondary Ion Mass Spectroscopy (SIMS) and Raman Spectroscopy.