Modeling and Simulation of Vertical Organic Permeable Base Transistors

Vertical organic permeable base transistors (OPBTs), characterized by a unique vertical structure, have demonstrated superior DC and AC performance. We characterize the fabricated OPBTs to calibrate a TCAD simulation, enabling us to further analyze the working principles of the device, as well as optimize and model the OPBTs. This study simplifies the complex structure of OPBTs in terms of their DC performance, thereby facilitating easier simulation, analysis, and compact model development. A charge-based compact model is adapted for OPBTs by considering the above mentioned simplification. The compact model and TCAD simulations are then compared to experimental data of an OPBT, showing a good agreement between them.