Performance Analysis and Compact Modeling of 12-nm P-channel Bulk FinFETs at Cryogenic Operating Temperatures for Quantum Computing Applications

In this paper an advanced 12 nm bulk FinFET technology is characterized and modelled at cryogenic temperatures down to ~10 K to predict the behaviour of quantum control circuits. Carrier mobility, threshold voltage, and subthreshold swing were recalibrated to cryogenic temperatures using additional variables. This enhanced BSIM-CMG model addresses key differences in low temperature behaviour of the devices, thereby providing the framework to use and extend the current PDK models to the cryogenic temperatures for quantum computing applications. Measurements at the cryogenic temperatures on the 12 nm bulk FinFETs show improved performance as compared to the FinFETs reported previously.