Nanointerconnect Design Using Unsaturated Edged Antimonene Nanoribbons: DFT-NEGF Analysis

The current work presents zigzag antimonene nanoribbons (SbNRs) to be designed as a metal interconnect using density functional theory (DFT) and nonequilibrium Green’s function (NEGF) investigation. The hydrogenated SbNRs (H-Sb-H) are semiconducting with 1.23 eV indirect energy band gap (
${E}_{g}$
), whereas the bare SbNRs (B-Sb-B) exhibit metallic nature. Furthermore, the voltage-dependent current-voltage (I–V) characteristics demonstrate a linear increase in current for the bare device. The interconnect parasitic parameters, namely, quantum capacitance (
${C}_{Q}$
), kinetic inductance (
${L}_{K}$
), and quantum resistance (
${R}_{Q}$
), are evaluated and found to be 14.05 fF/
$\mu $
m, 65.21 nH/
$\mu $
m, and 4.30 k
$\Omega $
, respectively. In addition, the nanointerconnect performance of B-Sb-B devices is examined through multiple analyses, including frequency response, stability, delay, crosstalk, and line parasitic effects. The results acquired demonstrate that the SbNR devices possess the capability of functioning as nanointerconnects.