Impact Statement:A high-performance IGZO/NiO/PbSe nanoband-array bipolar junction transistor has been reported with the manufacturing of this device. Experimental data indicates that this...Show More
Abstract:
This paper introduces a new device concept and outlines the fabrication process of a bipolar junction transistor based on an IGZO/NiO/PbSe nanoband array heterostructure....Show MoreMetadata
Impact Statement:
A high-performance IGZO/NiO/PbSe nanoband-array bipolar junction transistor has been reported with the manufacturing of this device. Experimental data indicates that this BJT demonstrates significant efficiency with a responsivity of 4000 A/W in near-infrared photo-detection, accompanied by an EQE of 2336.5% and a maximal photo-gain of 4.22 × 104. When integrated into a circuit, the BJT contributes to the development of an integrated solution detection system adept at accurately discerning.
Abstract:
This paper introduces a new device concept and outlines the fabrication process of a bipolar junction transistor based on an IGZO/NiO/PbSe nanoband array heterostructure. We performed comprehensive electrical property testing and characterization analysis on the device to thoroughly assess the device's performance. The heterojunction structure efficiently amplifies the opto-electric responsivity and enhances the transmission efficiency of photogenerated carriers. Significantly, the phototransistor demonstrates a high photoresponsivity of 4000 A/W under an incident light power of 1 μW/cm2 and a wavelength of 850 nm. Hence, a solution detection system integrated with a bipolar phototransistor is designed. Through the analysis of the output signals, the system accurately determines the identity of the solute present in the solution.
Published in: IEEE Photonics Journal ( Volume: 16, Issue: 4, August 2024)
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