94 GHz Two-Way-Combined Power Amplifiers with 14.2 dBm Peak Output Power in 300-nm InP/GaAsSb DHBT Technology

We present two-way-combined Power Amplifiers (PAs) in 300-nm InP/GaAsSb DHBT technology. One-Stage Common-Base (CB) and Common-Emitter (CE) structures are used as PA cells. The comparison between the two exhibits that the former delivers higher output power and superior gain compression behavior. At 94 GHz, class-ABbiased CB-based PA achieves 14.2 dBm POUT, SAT and 10.6% PAE. POUT, SAT at 92-96 GHz stays in the 13.9-14.3 dBm range. The technology used in this work features the highest maximum oscillation frequency fMAX = 1.2 THz in any bipolar transistor, record POUT, SAT, and power density per unit emitter area in any InP HBT, making GaAsSb-based DHBTs well-suited for mm- and sub-mm-wave power amplification. To the best of our knowledge, this work is the first PA reported in InP/GaAsSb HBT technology exploiting the aforementioned advantages in mm-wave PAs.