A Simulation-Based Study on Integration of Si/SiGe Heterojunction Diode in Retrograde p-Well Schottky Source MOSFET for Single-Event Effects Hardening and Reverse Recovery Enhancement

A novel structure of retrograde p-well Schottky source MOSFET with integrated Si/SiGe heterojunction diode (RP-HJD-S-MOS) is proposed by introducing a p-SiGe region at the center of the device’s source side. During the heavy-ion striking of RP-HJD-S-MOS, the p-SiGe region can help expel holes, thereby reducing the number of holes accumulated below the gate oxide layer and improving resistance to single-event gate rupture (SEGR). In addition, when the device operates in a reverse conductive state, the heterojunction diode has a lower barrier height of the electron compared with the parasitic PiN body diode. It can provide an additional electron current path, which turns on before the PiN diode and effectively suppresses the minority carrier injection from the PiN body diode, thereby improving the reverse recovery characteristics of the device. The TCAD simulation results show that under the same irradiation conditions, the SEGR resistance of RP-HJD-S-MOS is stronger than that of RP-SSBR-S-MOS. In addition, the reverse recovery charge of the novel structure is
$2.702~\mu $
C/cm2, reduced by 39.1% compared to RP-SSBR-S-MOS.