Negative Capacitance Field‐Effect Transistors

Summary

Negative‐capacitance (NC) field‐effect transistors (FETs), as self‐explained by the name, employs a negative capacitance in the gate stack to save switching voltage. It is emerging as one of the most promising and widely studied devices, not only due to its supply voltage scalability, but also thanks to its simple structure that involves minimal penalty in added manufacturing complexity. Currently, the fundamentals of NC‐FETs, as well as potential challenges and opportunities, have been well established and recognized by the device physicists. The switching of FETs is realized by electrostatic modulation of the potential of the channel through which current is conducted. The chapter depicts all of the relevant capacitors in a generic NC‐FET structure. An internal metal gate has been proposed to be inserted between the NC layer and the underlying metal oxide semiconductor field‐effect transistors.